r07ds1361ej0200 rev.2.00 page 1 of 6 sep 06, 2016 target specifications datasheet haf1010rj silicon p channel mos fet series power switching description this fet has the over temperature shut-down capability sensin g to the junction temperature. this fet has the built-in over temperature shut-down circuit in the gate area. and this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. features logic level operation to (?4 to ?6 v gate drive) built-in the over temperature shut-down circuit high endurance capability against to the shut-down circuit latch type shut down operation (need 0 voltage recovery) built-in the current limitation circuit. high density mounting power supply voltage applies 12 v and 24 v. outline 1 2 3 4 5 6 7 8 1, 2, 3 source 4gate 5, 6, 7, 8 drain renesas package code: prsp0008dd-d (package name: sop-8)) d s g 4 1 58 d 6 d 7 d gate resistor temperature sensing circuit latch circuit gate shut-down circuit current limitation circuit s 3 s 2 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss ?60 v gate to source voltage v gss ?16 v gate to source voltage v gss 2.5 v drain current i d ?5 a drain peak current i d (pulse) note1 ?10 a body-drain diode reverse drain current i dr ?5 a cannel dissipation pch note2 2.5 w cannel temperature tch 150 ? c storage temperature tstg ?55 to +150 ? c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. when using the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw 10s r07ds1361ej0200 rev.2.00 sep 06, 2016
haf1010rj target specifications r07ds1361ej0200 rev.2.00 page 2 of 6 sep 06, 2016 typical operation characteristics (ta = 25c) item symbol min typ max unit test conditions input voltage v ih ?3.5 ? ? v v il ? ? ?1.2 v input current (gate non shut down) i ih1 ? ? ?100 ? a vi = ?8v, v ds =0 i ih2 ? ? ?50 ? a vi = ?3.5v, v ds =0 i il ? ? ?1 ? a vi = ?1.2v, v ds =0 input current (gate shut down) i ih(sd)1 ? ?0.8 ? ma vi = ?8v, v ds =0 i ih(sd)2 ? ?0.35 ? ma vi = ?3.5v, v ds =0 shut down temperature tsd ? 175 ? ? c cannel temperature gate operation voltage vop ?3.5 ? ?12 v electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain current i d1 ?1.5 ? ? a v gs = ?3.5 v, v ds = ?2 v drain current i d2 ? ? ?10 ma v gs = ?1.2 v, v ds = ?2 v drain to source breakdown voltage v (br)dss ?60 ? ? v i d = ?10 ma, v gs = 0 gate to source breakdown voltage v (br)gss ?16 ? ? v i g = ?800 ? a, v ds = 0 gate to source breakdown voltage v (br)gss 2.5 ? ? v i g = 100 ? a, v ds = 0 gate to source leak current i gss1 ? ? ?100 ? a v gs = ?8 v, v ds = 0 i gss2 ? ? ?50 ? a v gs = ?3.5 v, v ds = 0 i gss3 ? ? ?1 ? a v gs = ?1.2 v, v ds = 0 i gss4 ? ? 100 ? a v gs = 2.4 v, v ds = 0 input current (shut down) i gs(op)1 ? ?0.8 ? ma v gs = ?8 v, v ds = 0 i gs(op)2 ? ?0.35 ? ma v gs = ?3.5 v, v ds = 0 zero gate voltage drain current i dss ? ? ?10 ? a v ds = ?60 v, v gs = 0 gate to source cut off voltage v gs(off) ?1.1 ? ?2.25 v v ds = ?10 v, i d = ?1 ma forward transfer admittance |y fs | 2 4 ? s i d =?2.5 a, v ds =?10 v note3 static drain to source on state resistance r ds(on) ? 200 340 m ? i d = ?2.5 a, v gs = ?4 v note3 r ds(on) ? 140 200 m ? i d = ?2.5 a, v gs = ?10 v note3 output capacitance coss ? 326 D pf v ds = ?10 v, v gs = 0, f = 1 mhz turn-on delay time td(on) ? 2 D ? s v gs = ?5 v, i d = ?2.5 a, r l = 12 ? rise time tr ? 7.6 ? ? s turn off delay time td(off) ? 3.2 D ? s fall time tf ? 3.2 ? ? s body-drain diode forward voltage v df ? ?0.9 ? v i f = ?5 a, v gs = 0 body-drain diode reverse recovery time trr ? 77 ? ns i f = ?5 a, v gs = 0 dif/dt = 50 a/ ? s over lord shut down operation time note4 t os1 ? 4.4 ? ms v gs = ?5 v, v dd = ?16 v t os2 ? 2 ? ms v gs = ?5 v, v dd = ?24 v notes: 3. pulse test 4. including the junction temperatur e rise of the lorded condition
haf1010rj target specifications r07ds1361ej0200 rev.2.00 page 3 of 6 sep 06, 2016 main characteristics channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain source voltage v ds (v) drain current i d (a) maximum safe operation area ?10 ?8 ?6 ?4 ?2 0 ?2 ?4 ?6 ?8 ?10 ?10 v v = ?3.5 v gs drain to source voltage v ds (v) typical output characteristics 0?1?2?3?4?5 25 c tc = 75 c tc = 75 c 25 c ?25 c ?25 c gate to source voltage v gs (v) drain current i d (a) drain current i d (a) typical transfer characteristics ?5 ?4 ?3 ?2 ?1 ?8 v ?6 v ?4 v pulse test v = ?10 v ds pulse test ?1.6 ?2.0 ?1.2 ?0.8 ?0.4 0?2?4?6?8?10 pulse test gate to source voltage v gs (v) drain to saturation voltage vs. gate to source voltage v ds(on) (v) drain to source saturation voltage ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?10 1000 200 500 100 20 50 10 drain current i d (a) drain source on sate resistance r ds(on) (m ) static drain to source state resistance vs. drain current ?2.5 a i = ?5 a d ?1 a v = ?4 v gs ?10 v pulse test -100 -30 -10 -3 -1 -0.3 -0.01 -0.03 -0.5 -0.3 -1 -2 -5 -10 -20 -50 -100 100 s 1 ms pw = 10 ms ta = 25 c 4 3 2 1 0 50 100 150 200 note5 dc operation ( pw 10s ) thermal shut down operation area operation in this area is limited by r ds(on) note 5: when using the glass epoxy board. ( fr4 40 x 40 x 1.6 mm) test condition. when using the glass epoxy board. (fr4 40 x 40 x 1.6 mm), (pw 10s)
haf1010rj target specifications r07ds1361ej0200 rev.2.00 page 4 of 6 sep 06, 2016 drain source on state resistance r ds(on) (m ) 500 400 300 200 100 ?25 0 25 50 75 100 125 0 pulse test case temperature tc ( c) drain to source on state resistance vs. temperature 10 2 1 5 drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) v gs = ?10 v v gs = ?4 v ?1 a ?1 a i d = ?5 a ?2.5 a ?2.5 a ?5 a ? 0.01 ? 0.1 ? 1 ? 10 0.5 0.2 0.1 0.01 0.02 0.05 tc = ?25 c 25 c 75 c v ds = ?10 v pulse test reverse drain current i dr (a) reverse recovery time trr (ns) body to drain diode reverse recovery time drain current i d (a) switching time t ( s) switching characteristics ?5 ?4 ?3 ?2 ?1 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 v gs = 0 v -5 v -10 v source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage pulse test 10000 1000 100 0 ?10 ?20 ?30 ?40 ?60 ?50 capacitance c (pf) drain to source v ds (v) typical capacitance vs. drain to source voltage 500 ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?10 200 100 1000 20 50 10 di / dt = 50 a / s v gs = 0, ta = 25 c 5 ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?10 2 1 0.5 0.2 0.1 50 20 10 100 t r v gs = ? 10 v, v dd = ? 30 v pw = 300 s, duty < 1 % t f t d(on) t d(off) v gs = 0 f = 1 mhz coss
haf1010rj target specifications r07ds1361ej0200 rev.2.00 page 5 of 6 sep 06, 2016 gate to source voltage v gs (v) gate to source voltage vs. shutdown time of load-short test shutdown time of lord-short test pw (s) 200 180 160 140 120 0 gate to source voltage v gs (v) shutdown case temperature tc (c) 100 ?2 ?4 ?6 ?8 ?10 i d = ?0.5 a shutdown case temperature vs. gate to source voltage pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse dm p pw t d = pw t ch ? f(t) = s (t) ? ch ? f ch ? f = 83.3 c/w, ta = 25 c when using the glass epoxy board (fr4 40 40 1.6 mm) -15 -5 -10 0 0.1 0.0001 0.001 0.01 -24 v v dd = -16 v
haf1010rj target specifications r07ds1361ej0200 rev.2.00 page 6 of 6 sep 06, 2016 package dimensions p-sop8-3.95 4.9-1.27 0.085g mass[typ.] fp-8da prsp0008dd-a renesas code jeita package code package name a 8 5 1 4 f b p c terminal cross section b 1 c 1 1.27 1.08 0.40 l 1 0.60 0.25 x 0.50 0.42 0.34 0.10 b p b 1 c 1 0.25 0.22 0.40 0.20 0.19 max nom min dimension in millimeters symbol reference 5.3 4.90 d 3.95 e 0.14 a 2 6.20 6.10 5.80 0.25 1.75 a 0.75 z l 8 0 c 1.27 e 0.1 y h e a 1 d * 1 * 2 e h e * 3 x m b p e z index mark y a 1 l 1 l detail f 2. 1. dimensions " * 1(nom)" and " * 2" do not include mold flash. note) dimension " * 3" does not include trim offset. ordering information part name quantity shipping container haf1010rj 2500 pcs/ reel embossed tape (reel) note: for some grades, production may be terminated. please contact the renesas sales office to check t he state of production before ordering the product.
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics do es not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property right s of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". the recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat t o human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics, e specially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas e lectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have spec ific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or otherwis e places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesas e lectronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this documen t or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-owned subs idiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2801 scott boulevard santa clara, ca 95050-2549, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 9251 yonge street, suite 8309 richmond hill, ontario canada l4c 9t3 tel: +1-905-237-2004 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-6503-0, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. room 1709, quantum plaza, no.27 zhichunlu haidian district, beijing 100191, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 301, tower a, central towers, 555 langao road, putuo district, shanghai, p. r. china 200333 tel: +86-21-2226-0888, fax: +86-21-2226-0999 renesas electronics hong kong limited unit 1601-1611, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2265-6688, fax: +852 2886-9022 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei 10543, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre, singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics malaysia sdn.bhd. unit 1207, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics india pvt. ltd. no.777c, 100 feet road, hal ii stage, indiranagar, bangalore, india tel: +91-80-67208700, fax: +91-80-67208777 renesas electronics korea co., ltd. 12f., 234 teheran-ro, gangnam-gu, seoul, 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2016 renesas electronics corporation. all rights reserved. colophon 5.0
|
